Layout method of semiconductor device with junction diode for preventing damage due to plasma charge

ABSTRACT

Provided is a layout method of junction diodes for preventing damage caused by plasma charge. The layout method includes operations of forming an active layer so as to form a plurality of active regions in a unit layout pattern; forming a gate layer so as to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed so as to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region so as to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions so as to form a junction diode in at least one active region between the first and second conductive type active regions.

CROSS-REFERENCE TO RELATED PATENT APPLICATION

This application claims priority under 35 USC § 119 to Korean PatentApplication No. 10-2007-0030043, filed on Mar. 27, 2007 in the KoreanIntellectual Property Office, the disclosure of which is incorporatedherein in its entirety by reference.

BACKGROUND

1. Technical Field

The present invention relates to a layout method of a semiconductordevice, and more particularly, to a layout method of junction diodes forpreventing damage caused by plasma charge.

2. Description of the Related Art

Due to increasing demands for high integration, very small patterns, andhigh performance semiconductor devices, various plasma processes aretypically required in fabricating the semiconductor devices. The variousplasma processes can include a dry etching process, a thin filmdeposition process using a plasma-enhanced chemical vapor deposition(PE-CVD) process, an ashing process, and a blanket etchback process. Thedry etching process is generally used in fabricating highly integratedsemiconductor devices because the dry etching process has an advantagein that even very small patterns can be processed to have an anisotropicetch characteristic, in comparison with a conventional wet etchingprocess.

However, when the plasma process is applied to fabricate ametal-oxide-semiconductor (MOS) transistor, unequal charge isaccumulated in the dry etching process for forming a gate line and awiring line, or in the ashing process for removing a photosensitivepattern. Accordingly, a gate insulating layer can be damaged (referredto as “plasma damage”) due to the plasma charge which migrates to bothedge side walls and a surface of a conductive layer forming the gateline or the wiring line. A defect of the semiconductor device caused bythe plasma damage is mainly found during use by a customer after sale,whereas other initial defects can be screened in advance of delivery tothe customer.

To address the plasma damage problem, a method of disposing a junctiondiode on a gate pattern has been developed. In other words, by using anNP diode for an N-type metal-oxide-semiconductor (NMOS) transistor and aPN diode for a P-type metal-oxide-semiconductor (PMOS) transistor, theunequal charge caused by the plasma process flows toward a circuit boardthrough the junction diode rather than accumulating in undesiredlocations.

FIG. 1 illustrates a conventional layout method of a junction diode 150for minimizing plasma damage. Referring to FIG. 1, for example, thejunction diode 150 for minimizing plasma damage is provided in additionto providing a P-type metal-oxide-semiconductor (PMOS) transistor 110and an N-type metal-oxide-semiconductor (NMOS) transistor 130, therebyforming an inverter circuit. A P-active layer 114 a and a gate polylayer 116 a included in the PMOS transistor 110 are disposed in anN-well layer 112. Bit poly layers 122 a surrounding a contact layer 120a are disposed on the P-active layer 114 a included in the PMOStransistor 110. One bit poly layer 122 a on the P-active layer 114 aconnects with a metal layer 126 a through a via layer 124 a. A powersupply voltage (VINT) is applied to the metal layer 126 a. Another bitpoly layer 122 a on the P-active layer 114 a connects with one bit polylayer 122 b which is connected with an N-active layer 118 b through acontact layer 120 b which are included in the NMOS transistor 130. TheP-active layer 114 a forms a P-type doped active region and the N-activelayer 118 b forms an N-type doped active region.

A metal layer 126 c to which a well bias voltage (VINTW) is applied,connects with a bit poly layer 122 d through a via layer 124 c and thebit poly layer 122 d connects with an N-active layer 118 a through acontact layer 120 d. Thus, the N-active layer 118 a forms a well guardring in the N-well layer 112.

The N-active layer 118 b and a gate poly layer 116 b are included in theNMOS transistor 130. The bit poly layers 122 b surrounding the contactlayer 120 b are disposed on the N-active layer 118 b. Another bit polylayer 122 b on the N-active layer 118 b connects with a metal layer 126b through a via layer 124 b and then connects with a P-active layer 114b through a contact layer 120 e. A ground voltage (VSS) is applied tothe metal layer 126 b. The P-active layer 114 b, to which the VSS isapplied, forms a P-substrate bias.

The gate poly layers 116 a and 116 b, respectively included in the PMOStransistor 110 and the NMOS transistor 130, connect with a bit polylayer 122 c through a contact layer 120 c. The bit poly layer 122 cconnects with an N-active layer 118 c through a contact layer 120 f. TheN-active layer 118 c forms the NP junction diode 150 for preventingdamage caused by plasma charge.

FIG. 2 illustrates an example wherein a dummy gate poly layer 116 c isdisposed in a region close to the gate poly layer 116 b when the layoutshown in FIG. 1 is disposed uniformly on a substrate. The dummy gatepoly layer 116 c is used in order to reduce step coverage in a gate polyregion when the layout is formed repeatedly. Referring to FIG. 2, thedummy gate poly layer 116 c overlaps with the N-active layer 118 cforming the junction diode 150 for preventing damage caused by plasmacharge, and hereinafter, this overlapped region is defined as region“A”. Although region “A” is not a transistor according to design rules,the region “A” may be misrecognized as a transistor region.

Therefore, a layout method of the junction diode 150 for preventingdamage caused by plasma charge is needed for the dummy gate poly layer116 c such that it does not overlap with the N-active layer 118 c, eventhough a unit layout is disposed uniformly on a substrate.

SUMMARY

The present invention provides a layout method of junction diodes forpreventing damage caused by plasma charge.

According to an aspect of the present invention, there is provided alayout method for a unit layout pattern, the method including: formingan active layer so as to form a plurality of active regions in the unitlayout pattern; forming a gate layer so as to form a plurality of gateregions on the active regions; forming a first conductive type dopingregion in at least one of the plurality of active regions which iswithin a well layer where a second conductive type well region is formedso as to form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions which is outside of the second conductive type well region so asto form a second conductive type active region; and forming a secondconductive type doping region which is connected with the gate regionsso as to form a junction diode in at least one active region between thefirst and second conductive type active regions.

Accordingly, when laying out a unit layout pattern according to thelayout method of the junction diode for preventing damage caused byplasma charge, a dummy gate poly is not required in order to reduce astep coverage in the gate poly region, since the gate poly region isdisposed at regular intervals. Further, the width of the unit layoutpattern is substantially equal to the widths of the NMOS and PMOStransistors. Therefore, a layout area can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 illustrates a conventional method of laying out a junction diodefor preventing damage caused by plasma charge;

FIG. 2 illustrates an example where a dummy gate poly layer is disposedin order to reduce a step coverage in a gate poly region, in the layoutmethod shown in FIG. 1;

FIG. 3 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to an embodiment of the presentinvention;

FIG. 4 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention;

FIG. 5 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention; and

FIG. 6 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention.

DETAILED DESCRIPTION

The attached drawings for illustrating exemplary embodiments of thepresent invention are referred to in order to gain a sufficientunderstanding of the present invention, the merits thereof, and theobjectives accomplished by implementation of the present invention.

Hereinafter, the present invention will be described in detail byexplaining exemplary embodiments of the invention with reference to theattached drawings. Like reference numerals in the drawings denote likeelements.

FIG. 3 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to an embodiment of the presentinvention. Referring to FIG. 3, a junction diode 350 for preventingdamage caused by plasma charge is between gates of a P-typemetal-oxide-semiconductor (PMOS) transistor 310 and an N-typemetal-oxide-semiconductor (NMOS) transistor 330. A P-active layer 314 aand a gate poly layer 316 a included in the PMOS transistor 310 aredisposed in an N-well layer 312. Bit poly layers 322 a surrounding acontact layer 320 a are disposed on the P-active layer 314 a. One bitpoly layer 322 a on the P-active layer 314 a connects with a metal layer326 a through a via layer 324 a. An internal voltage (VINT) is appliedto the metal layer 326 a. Another bit poly layer 322 a on the P-activelayer 314 a connects with one bit poly layer 322 b which is connectedwith an N-active layer 318 b through a contact layer 320 b which areincluded in the NMOS transistor 330.

The N-active layer 318 b and a gate poly layer 316 b are included in theNMOS transistor 330. The bit poly layers 322 b surrounding the contactlayer 320 b are disposed on the N-active layer 318 b. Another bit polylayer 322 b on the N-active layer 318 b connects with a metal layer 326b through a via layer 324 b and then connects with a P-active layer 314b through a contact layer 320 c. A ground voltage (VSS) is applied tothe metal layer 326 b. The P-active layer 314 b, to which the VSS isapplied, forms a P-substrate bias.

The junction diode 350 for preventing damage caused by plasma chargeincludes an N-active layer 318 c forming an NP diode. The N-active layer318 c connects with a bit poly layer 322 c through a contact layer 320d. The bit poly layer 322 c connects with the gate poly layer 316 a inthe PMOS transistor 310 and the gate poly layer 316 b in the NMOStransistor 330 through contact layers 320 e. Thus, according to someembodiments, the junction diode 350 may be disposed between the NMOStransistor 330 and the PMOS transistor 310.

A metal layer 326 c to which a well bias internal voltage (VINTW) isapplied, connects with a bit poly layer 322 d through a via layer 324 c.The bit poly layer 322 d connects with an N-active layer 318 a through acontact layer 320 f and thus the N-active layer 318 a forms a well biasin the N-well layer 312.

When laying out a unit layout pattern uniformly across a substrate,according to the layout method of the junction diode shown in FIG. 3, agate poly region is disposed at regular intervals such that a dummy gatepoly is not required to reduce step coverage in the gate poly region.Further, the widths of the N-active layer 318 a and P-active layer 314 aare substantially equal to the width of the unit layout pattern.Therefore, the layout method of the junction diode for preventing damagecaused by plasma charge can reduce the layout area, in comparison toconventional methods.

FIG. 4 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention. Comparing the layout method shown in FIG. 4 to thatof FIG. 3, a PMOS transistor 410 and an NMOS transistor 430 are disposedclose to each other and a junction diode 450 for preventing damagecaused by plasma charge is disposed below the NMOS transistor 430. Thus,according to some embodiments, the NMOS transistor 430 may be disposedbetween the junction diode 450 and the PMOS transistor 410.

FIG. 5 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention. Referring to FIG. 5, a junction diode 550 forpreventing damage caused by plasma charge is a PN diode, while thejunction diode 350 for preventing damage caused by plasma charge is anNP diode in the layout shown in FIG. 3. In a structure for the junctiondiode 550 for preventing damage caused by plasma charge, the junctiondiode 550 connects with the bit poly layer 322 c through the contactlayer 320 e connecting with the gate poly layer 316 a in a PMOStransistor 510 and the gate poly layer 316 b in an NMOS transistor 530.The bit poly layer 322 c connects with a P-active layer 314 c throughthe contact layer 320 d. Thus, unlike conventional layout methods, thejunction diode 550 is disposed between the NMOS transistor 530 and thePMOS transistor 510.

FIG. 6 illustrates a layout method of a junction diode for preventingdamage caused by plasma charge according to another embodiment of thepresent invention. Comparing the layout method shown in FIG. 6 to thatof FIG. 5, a PMOS transistor 610 and an NMOS transistor 630 are disposedclose to each other and a junction diode 650 for preventing damagecaused by plasma charge is disposed above the PMOS transistor 610. Thus,unlike conventional layout methods, the PMOS transistor 610 is disposedbetween the junction diode 650 and the NMOS transistor 630.

According to an aspect of the present invention, there is provided alayout method for forming a unit layout pattern, the method including:forming an active layer so as to form a plurality of active regions inthe unit layout pattern; forming a gate layer so as to form a pluralityof gate regions on the active regions; forming a first conductive typedoping region in at least one of the plurality of active regions withina well layer where a second conductive type well region is formed so asto form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions outside of the second conductive type well region so as to forma second conductive type active region; and forming a second conductivetype doping region connected with the gate regions so as to form ajunction diode in at least one active region between the first andsecond conductive type active regions, wherein a width of the first andsecond conductive type active regions is substantially equal to a widthof the unit layout pattern.

The layout method may further include the operation of forming a firstconductive type doping region so as to form a well guard ring region inat least one of the plurality of active regions within the secondconductive type well region at an edge of the unit layout pattern.

The first and second conductive type active regions may form a sourceregion and a drain region, respectively, of a metal-oxide-semiconductor(MOS) transistor.

According to another aspect of the present invention, there is provideda layout method for forming a unit layout pattern, the method including;forming an active layer so as to form a plurality of active regions inthe unit layout pattern; forming a gate layer so as to form a pluralityof gate regions on the active regions; forming a first conductive typedoping region in at least one of the plurality of active regions withina well layer where a second conductive type well region is formed so asto form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions outside of the second conductive type well region so as to forma second conductive type active region; and disposing a secondconductive type doping region connected with the gate region so as toform a junction diode in at least one active region disposed below thesecond conductive type active region, wherein a width of the first andsecond conductive type active regions is substantially equal to a widthof the unit layout pattern.

According to another aspect of the present invention, there is provideda layout method for forming a unit layout pattern, the method including:forming an active layer so as to form a plurality of active regions inthe unit layout pattern; forming a gate layer so as to form a pluralityof gate regions on the active regions; forming a first conductive typedoping region in at least one of the plurality of active regions withina well layer where a second conductive type well region is formed so asto form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions outside of the second conductive type well region so as to forma second conductive type active region; and forming a first conductivetype doping region connected with the gate regions so as to form ajunction diode in at least one active region within the secondconductive type well region between the first and second conductive typeactive regions, wherein a width of the first and second conductive typeactive regions is substantially equal to a width of the unit layoutpattern.

According to another aspect of the present invention, there is provideda layout method for forming a unit layout pattern, the method including:forming an active layer so as to form a plurality of active regions inthe unit layout pattern; forming a gate layer so as to form a pluralityof gate regions on the active regions; forming a first conductive typedoping region in at least one of the plurality of active regions withina well layer where a second conductive type well region is formed so asto form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions outside of the second conductive type well region so as to forma second conductive type active region; and forming a first conductivetype doping region connected with the gate region so as to form ajunction diode in at least one active region disposed above the firstconductive type active region within the second conductive type wellregion, wherein a width of the first and second conductive type activeregions is substantially equal to a width of the unit layout pattern.

Accordingly, when laying out a unit layout pattern uniformly across asubstrate, according to the layout method of the junction diode forpreventing damage caused by plasma charge, a dummy gate poly is notrequired to reduce a step coverage in the gate poly region, since thegate poly region is disposed at regular intervals. Further, the width ofthe unit layout pattern is substantially equal to the widths of the NMOSand PMOS transistors. Therefore, a layout area can be reduced.

While the present invention has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodby those of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present invention as defined by the following claims.

1. A layout method for forming a unit layout pattern, the methodcomprising: forming an active layer so as to form a plurality of activeregions in the unit layout pattern; forming a gate layer so as to form aplurality of gate regions on the active regions; forming a firstconductive type doping region in at least one of the plurality of activeregions which is within a well layer where a second conductive type wellregion is formed so as to form a first conductive type active region;forming a second conductive type doping region in at least one of theplurality of active regions which is outside of the second conductivetype well region so as to form a second conductive type active region;and forming a second conductive type doping region connected with thegate regions so as to form a junction diode in at least one activeregion between the first and second conductive type active regions. 2.The layout method of claim 1, wherein a width of the first and secondconductive type active regions is substantially equal to a width of theunit layout pattern.
 3. The layout method of claim 1, further comprisingforming a first conductive type doping region so as to form a well guardring region in at least one of the plurality of active regions withinthe second conductive type well region at an edge of the unit layoutpattern.
 4. The layout method of claim 1, wherein the first and secondconductive type active regions form a source region and a drain region,respectively, of a metal-oxide-semiconductor (MOS) transistor.
 5. Alayout method for a unit layout pattern, the method comprising: formingan active layer so as to form a plurality of active regions in the unitlayout pattern; forming a gate layer so as to form a plurality of gateregions on the active regions; forming a first conductive type dopingregion in at least one of the plurality of active regions within a welllayer where a second conductive type well region is formed so as to forma first conductive type active region; forming a second conductive typedoping region in at least one of the plurality of active regions outsideof the second conductive type well region so as to form a secondconductive type active region; and forming a second conductive typedoping region connected with the gate regions so as to form a junctiondiode in at least one active region disposed below the second conductivetype active region.
 6. The layout method of claim 5 wherein a width ofthe first and second conductive type active regions is substantiallyequal to a width of the unit layout pattern.
 7. The layout method ofclaim 5, further comprising forming a first conductive type dopingregion so as to form a well guard ring region in at least one of theplurality of active regions within the second conductive type wellregion at an edge of the unit layout pattern.
 8. The layout method ofclaim 5, wherein the first and second conductive type active regionsform a source region and a drain region, respectively, of ametal-oxide-semiconductor (MOS) transistor.
 9. The layout method ofclaim 5, wherein the second conductive type active region is disposedbetween the junction diode and the first conductive type active region.10. A layout method for a unit layout pattern, the method comprising:forming an active layer so as to form a plurality of active regions inthe unit layout pattern; forming a gate layer so as to form a pluralityof gate regions on the active regions; forming a first conductive typedoping region in at least one of the plurality of active regions withina well layer where a second conductive type well region is formed so asto form a first conductive type active region; forming a secondconductive type doping region in at least one of the plurality of activeregions outside of the second conductive type well region so as to forma second conductive type active region; and forming a first conductivetype doping region connected with the gate regions so as to form ajunction diode in at least one active region within the secondconductive type well region between the first and second conductive typeactive regions.
 11. The layout method of claim 10, further comprisingforming a first conductive type doping region so as to form a well guardring region in at least one of the plurality of active regions withinthe second conductive type well region at an edge of the unit layoutpattern.
 12. The layout method of claim 10, wherein the first and secondconductive type active regions form a source region and a drain region,respectively, of a metal-oxide-semiconductor (MOS) transistor.
 13. Alayout method for a unit layout pattern, the method comprising: formingan active layer so as to form a plurality of active regions in the unitlayout pattern; forming a gate layer so as to form a plurality of gateregions on the active regions; forming a first conductive type dopingregion in at least one of the plurality of active regions within a welllayer where a second conductive type well region is formed so as to forma first conductive type active region; forming a second conductive typedoping region in at least one of the plurality of active regions outsideof the second conductive type well region so as to form a secondconductive type active region; and forming a first conductive typedoping region connected with the gate regions so as to form a junctiondiode in at least one active region disposed above the first conductivetype active region within the second conductive type well region.
 14. Alayout method of claim 13, wherein a width of the first and secondconductive type active regions is substantially equal to a width of theunit layout pattern.
 15. The layout method of claim 13, furthercomprising forming a first conductive type doping region so as to form awell guard ring region in at least one of the plurality of activeregions within the second conductive type well region at an edge of theunit layout pattern.
 16. The layout method of claim 13, wherein thefirst and second conductive type active regions form a source region anda drain region, respectively, of a metal-oxide-semiconductor (MOS)transistor.
 17. The layout method of claim D, wherein the firstconductive type active region is disposed between the junction diode andthe second conductive type active region.